IONIZING RADIATION EFFECTS IN MOS OXIDES (International

Condition - Very Good
The item shows wear from consistent use, but it remains in good condition and functions properly. Item may arrive with damaged packaging or be repackaged. It may be marked, have identifying markings on it, or have minor cosmetic damage. It may also be missing some parts/accessories or bundled items.

IONIZING RADIATION EFFECTS IN MOS OXIDES (International Advances in Solid State Electronics and Technology)
- Used Book in Good Condition
This volume is intended to serve as an updated critical guide to the extensive literature on the basic physical mechanisms controlling the radiation and reliability responses of MOS oxides. The last such guide was Ionizing Radiation Effects in MOS Devices and Circuits, edited by Ma and Dressendorfer and published in 1989. While that book remains an authoritative reference in many areas, there has been a significant amount of more recent work on the nature of the electrically active defects in MOS oxides which are generated by exposure to ionizing radiation. These same defects are also critical in many other areas of oxide reliability research. As a result of this work, the understanding of the basic physical mechanisms has evolved. This book summarizes the new work and integrates it with older work to form a coherent, unified picture. It is aimed primarily at specialists working on radiation effects and oxide reliability.
Country USA
Brand World Scientific Publishing Company
Manufacturer World Scientific Publishing Company
Binding Hardcover
UnitCount 1
EANs 9789810233266
ReleaseDate 0000-00-00

Country	USA
Brand	World Scientific Publishing Company
Manufacturer	World Scientific Publishing Company
Binding	Hardcover
UnitCount	1
EANs	9789810233266
ReleaseDate	0000-00-00

IONIZING RADIATION EFFECTS IN MOS OXIDES (International Advances in Solid State Electronics and Technology)

Customers who purchased this also purchased....