Modeling and Characterization of RF and Microwave Power FETs

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Modeling and Characterization of RF and Microwave Power FETs (The Cambridge RF and Microwave Engineering Series)
- Used Book in Good Condition
This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.
Country USA
Brand Cambridge University Press
Manufacturer Cambridge University Press
Binding Hardcover
ItemPartNumber 150 b/w illus.
UnitCount 1
Format Illustrated
EANs 9780521870665
ReleaseDate 0000-00-00

Country	USA
Brand	Cambridge University Press
Manufacturer	Cambridge University Press
Binding	Hardcover
ItemPartNumber	150 b/w illus.
UnitCount	1
Format	Illustrated
EANs	9780521870665
ReleaseDate	0000-00-00

Modeling and Characterization of RF and Microwave Power FETs (The Cambridge RF and Microwave Engineering Series)

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