Semiconductor Process Reliability in Practice
Product Description
Condition - Very Good
The item shows wear from consistent use but remains in good condition. It may arrive with damaged packaging or be repackaged.
Semiconductor Process Reliability in Practice
Proven processes for ensuring semiconductor device reliability
Co-written by experts in the field, Semiconductor Process Reliability in Practice contains detailed descriptions and analyses of reliability and qualification for semiconductor device manufacturing and discusses the underlying physics and theory. The book covers initial specification definition, test structure design, analysis of test structure data, and final qualification of the process. Real-world examples of test structure designs to qualify front-end-of-line devices and back-end-of-line interconnects are provided in this practical, comprehensive guide.
Coverage includes:
- Basic device physics
- Process flow for MOS manufacturing
- Measurements useful for device reliability characterization
- Hot carrier injection
- Gate-oxide integrity (GOI) and time-dependentdielectric breakdown (TDDB)
- Negative bias temperature instability
- Plasma-induced damage
- Electrostatic discharge protection of integrated circuits
- Electromigration
- Stress migration
- Intermetal dielectric breakdown
